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FDS4072N3
February 2004
FDS4072N3
40V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for "low side" synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Features
* 12.4 A, 40 V RDS(ON) = 12 m @ VGS = 4.5 V RDS(ON) = 10 m @ VGS = 10 V * High performance trench technology for extremely low RDS(ON) * High power and current handling capability * Fast switching * FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
Applications
* Synchronous rectifier * DC/DC converter
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
40 12
(Note 1a)
Units
V V A W C
12.4 60 3.0 1.5 -55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
40 0.5
C/W C/W
Package Marking and Ordering Information
Device Marking FDS4072N3 Device FDS4072N3 Reel Size 13'' Tape width 12mm Quantity 2500 units
2004 Fairchild Semiconductor Corporation
FDS4072N3 Rev B2 (W)
FDS4072N3
Electrical Characteristics
Symbol
EAS IAS BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on)
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD = 20V, ID=12.4 A
Min
Typ
Max Units
200 12.4 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
ID = 250 A VGS = 0 V, ID = 250 A, Referenced to 25C VDS = 32 V, VGS = 12 V, VGS = -12 V , VGS = 0 V VDS = 0 V VDS = 0 V
40 38 1 100 -100
V mV/C A nA nA
On Characteristics
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance Forward Transconductance
ID = 250 A VDS = VGS, ID = 250 A, Referenced to 25C VGS = 4.5 V, ID = 12.4 A VGS = 10 V, ID = 13.7 A VGS = 4.5 V, ID = 12.4 A,TJ = 125C VDS = 10 V, ID = 12.4 A
1
1.3 -4.5 9.7 8.5 14.7 84
3
V mV/C
12 10 20
m
gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD trr Qrr
S
Dynamic Characteristics
Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 20 V, f = 1.0 MHz
V GS = 0 V,
4299 351 149
pF pF pF
Switching Characteristics
Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 20 V, VGS = 4.5 V,
ID = 1 A, RGEN = 6
20 12 52 18
36 22 83 32 46
ns ns ns ns nC nC nC
VDS = 20 V, VGS = 4.5 V
ID = 12.4 A,
33 7.8 8.1
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.5 A Voltage IF = 12.4 A, Diode Reverse Recovery Time diF/dt = 100 A/s Diode Reverse Recovery Charge 2.5
(Note 2)
A V nS nC
0.7 30 90
1.2
FDS4072N3 Rev B2 (W)
FDS4072N3
Electrical Characteristics
Notes:
TA = 25C unless otherwise noted
1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a)
40C/W when mounted on a 1in2 pad of 2 oz copper
b)
85C/W when mounted on a minimum pad of 2 oz copper
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS4072N3 Rev B2 (W)
FDS4072N3
Typical Characteristics
80
4.5V
ID, DRAIN CURRENT (A) 60
2.5V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
VGS =10V
1.6 3.0V
1.4 VGS = 2.5V 1.2
40
3.0V 3.5V 4.5V 10V
20
1
0 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V)
0.8 0 20 40 ID, DRAIN CURRENT (A) 60 80
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 RDS(ON), ON-RESISTANCE (OHM)
1.9 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
ID = 12.4A VGS = 4.5V
1.6
ID = 6.2A
0.02
1.3
TA = 125oC
0.015
1
0.01
0.7
TA = 25oC
0.005
0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC)
1
4
7
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
80 IS, REVERSE DRAIN CURRENT (A)
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V
ID, DRAIN CURRENT (A) 60
VGS = 0V
10 1 0.1 0.01 0.001 0.0001
TA = 125 C
o
40
25 C
o
20
-55 C
o
TA =125 C 25 C
0 1 1.5 2
o
o
-55 C
2.5 3
o
0
0.2
0.4
0.6
0.8
1
1.2
VGS, GATE TO SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS4072N3 Rev B2 (W)
FDS4072N3
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V)
6000
ID = 12.4A
8
VDS = 10V
20V
CAPACITANCE (pF)
5000
f = 1MHz VGS = 0 V CISS
30V
6
4000 3000 2000 1000
4
2
COSS CRSS
0 0 20 40 Qg, GATE CHARGE (nC) 60 80
0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
1000
P(pk), PEAK TRANSIENT POWER (W)
Figure 8. Capacitance Characteristics.
50
ID, DRAIN CURRENT (A)
100
RDS(ON) LIMIT
10
1
0.1
VGS = 4.5V SINGLE PULSE o RJA = 85 C/W TA = 25 C
o
100s 1ms 10ms 100ms 1s 10s DC
40
SINGLE PULSE RJA = 85C/W TA = 25C
30
20
10
0.01 0.01
0.1
1
10
100
0 0.01
0.1
1
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
t1, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
1
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
D = 0.5
0.2
RJA(t) = r(t) * RJA RJA = 85 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.1
0.1 0.05 0.02
0.01
0.01 SINGLE PULSE
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design.
FDS4072N3 Rev B2 (W)
FDS4072N3
Dimensional Outline and Pad Layout
FDS4072N3 Rev B2 (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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DISCLAIMER
ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC OPTOPLANARTM PACMANTM
POPTM Power247TM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER SMART STARTTM SPMTM
StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. I8

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